Kingston ACR16D3LS1NGG/4G 4GB vs Mushkin 99[2/7/4]202F 4GB

总分

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

总分

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/4G 4GB

需要考虑的原因
Kingston ACR16D3LS1NGG/4G 4GB

报告一个错误

Mushkin 99[2/7/4]202F 4GB

需要考虑的原因
Mushkin 99[2/7/4]202F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 -24% 更低的延时
更快的读取速度，GB/s

15 11.4

测试中的平均数值
更快的写入速度，GB/s

11.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/4G 4GB

Mushkin 99[2/7/4]202F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 25
读取速度，GB/s

11.4 15.0
写入速度，GB/s

8.4 11.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1906 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18ADF2G72AZ-2G3A1 16GB

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G Skill Intl F4-3600C14-8GTZNB 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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Crucial Technology BL32G32C16U4R.M16FB1 32GB

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A-DATA Technology VDQVE1B16 2GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

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Kingston 99U5474-023.A00LF 4GB

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Kingston MSI24D4S7D8MB-16 16GB

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Samsung M378B1G73EB0-CK0 8GB

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Samsung M474A4G43MB1-CTD 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-2800C18-8GRS 8GB

G Skill Intl F4-2800C18-8GRS 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston KHX3000C15D4/8GX 8GB

Kingston KHX3000C15D4/8GX 8GB