RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
35
左右 23% 更低的延时
更快的读取速度,GB/s
11.9
10.5
测试中的平均数值
更快的写入速度,GB/s
8.5
8.1
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
35
读取速度,GB/s
11.9
10.5
写入速度,GB/s
8.5
8.1
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
1998
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905598-028.A00G 8GB
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G240081 8GB
Kingston 9965516-112.A00LF 16GB
Golden Empire CL19-19-19 D4-2666 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMD32GX4M4C3200C14C 8GB
Kingston KF552C40-16 16GB
Corsair CMU16GX4M2A2666C16 8GB
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-2400C11-8GSR 8GB
Samsung M378A5244CB0-CTD 4GB
Essencore Limited KD4AGU880-36A180U 16GB
A-DATA Technology AD73I1B1672EG 2GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KYXC0V-MIB 16GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
Apacer Technology 78.01G86.9H50C 1GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Apacer Technology 78.01G86.9H50C 1GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
报告一个错误
×
Bug description
Source link