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Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
比较
Samsung M378B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
更快的读取速度,GB/s
11.7
9.1
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
39
左右 -8% 更低的延时
更快的写入速度,GB/s
7.9
7.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
36
读取速度,GB/s
11.7
9.1
写入速度,GB/s
7.2
7.9
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1749
2090
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
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报告一个错误
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Bug description
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