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Ramaxel Technology RMT1970ED48E8F1066 2GB
Essencore Limited IM44GU48N26-FFFHM 4GB

Ramaxel Technology RMT1970ED48E8F1066 2GB vs Essencore Limited IM44GU48N26-FFFHM 4GB

总分
star star star star star
Ramaxel Technology RMT1970ED48E8F1066 2GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

总分
star star star star star
Essencore Limited IM44GU48N26-FFFHM 4GB

Essencore Limited IM44GU48N26-FFFHM 4GB

差异 规格 评论

差异

Ramaxel Technology RMT1970ED48E8F1066 2GB 需要考虑的原因
Ramaxel Technology RMT1970ED48E8F1066 2GB
报告一个错误
Essencore Limited IM44GU48N26-FFFHM 4GB 需要考虑的原因
Essencore Limited IM44GU48N26-FFFHM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 27
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT1970ED48E8F1066 2GB
Essencore Limited IM44GU48N26-FFFHM 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 21
  • 读取速度，GB/s
    11.4 left arrow 15.9
  • 写入速度，GB/s
    7.1 left arrow 12.2
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1440 left arrow 3089

Ramaxel Technology RMT1970ED48E8F1066 2GB RAM的比较

Kingston 99U5469-046.A00LF 4GB
Elpida EBJ41UF8BCS0-DJ-F 4GB

Essencore Limited IM44GU48N26-FFFHM 4GB RAM的比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMT1970ED48E8F1066 2GB
Ramaxel Technology RMT1970ED48E8F1066 2GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Essencore Limited IM44GU48N26-FFFHM 4GB
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Samsung M386B4G70DM0-CMA4 32GB
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Corsair CMT128GX4M4C3200C16 32GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Kingston 9905625-074.A00G 16GB
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Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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G Skill Intl F4-4400C19-8GTZKK 8GB
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Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
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Essencore Limited KD48GU880-32A160T 8GB
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TwinMOS 8DHE3MN8-HATP 2GB
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G Skill Intl F4-2400C14-16GRK 16GB
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G Skill Intl F3-2666C12-8GTXD 8GB
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内存RAM
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Kingston 9905702-008.A00G 8GB
内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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Avant Technology J641GU42J9266NL 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
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Crucial Technology CT8G4SFS824A.M8FE 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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Crucial Technology CT8G4SFS824A.C8FAD1 8GB
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