Kingston ACR256X64D3S1333C9 2GB vs Essencore Limited IM44GU48N28-GGGHM 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Essencore Limited IM44GU48N28-GGGHM 4GB

Essencore Limited IM44GU48N28-GGGHM 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 67

左右 60% 更低的延时
更快的写入速度，GB/s

8.5 8.3

测试中的平均数值

Essencore Limited IM44GU48N28-GGGHM 4GB

需要考虑的原因
Essencore Limited IM44GU48N28-GGGHM 4GB

报告一个错误

更快的读取速度，GB/s

16.5 11.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Essencore Limited IM44GU48N28-GGGHM 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 67
读取速度，GB/s

11.9 16.5
写入速度，GB/s

8.5 8.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 1876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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AMD R538G1601U2S 8GB

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Wilk Elektronik S.A. GY2666D464L16/8G 8GB

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Samsung M391B5273CH0-CH9 4GB

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Micron Technology 16ATF2G64HZ-2G3E2 16GB

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Nanya Technology M2Y2G64CB8HC5N-CG 2GB

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AMD R5S38G1601U2S 8GB

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Kingston KHX1600C9D3/8G 8GB

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Shenzen Recadata Storage Technology 8GB

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Corsair CMT128GX4M4C3200C16 32GB

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G Skill Intl F4-3200C16-16GTZ 16GB

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Kingston 9905678-029.A00G 8GB

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Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N