Samsung M378B5773DH0-CH9 2GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Lexar Co Limited LD4BU008G-H3200ULH 8GB

需要考虑的原因
Lexar Co Limited LD4BU008G-H3200ULH 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 39

左右 -22% 更低的延时
更快的读取速度，GB/s

20.6 11.7

测试中的平均数值
更快的写入速度，GB/s

14.7 7.2

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 32
读取速度，GB/s

11.7 20.6
写入速度，GB/s

7.2 14.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1749 3393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965516-112.A00LF 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Crucial Technology CT16G4SFRA32A.C16FJ 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Essencore Limited IM48GU88N26-FFFHMZ 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Patriot Memory (PDP Systems) 4000 C16 Series 8GB

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Corsair CMD16GX4M4B3200C16-R 4GB

Kingston 9905403-156.A00LF 2GB

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Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905744-067.A00G 32GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB