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Samsung M471A1G44AB0-CWE 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB

Samsung M471A1G44AB0-CWE 8GB vs Micron Technology 8ATF1G64AZ-2G6H1 8GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

差异 规格 评论

差异

Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Micron Technology 8ATF1G64AZ-2G6H1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6H1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 50
    左右 -47% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 10.9
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G44AB0-CWE 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 34
  • 读取速度，GB/s
    15.3 left arrow 16.2
  • 写入速度，GB/s
    10.9 left arrow 13.1
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2512 left arrow 3020

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905678-007.A00G 8GB
Kingston 9905678-007.A00G 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965669-027.A00G 16GB
Kingston 9965669-027.A00G 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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SK Hynix HMAA2GU6AJR8N-XN 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
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Corsair CM4X4GF2133C13K4 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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A-DATA Technology AO1P24HC8T1-BSFS 8GB
内存RAM
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Kingston 9905403-061.A00LF 2GB
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Kingston 9905712-010.A00G 16GB
内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX4GX4M1A2400C16 4GB
Corsair CMSX4GX4M1A2400C16 4GB
内存RAM
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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
G Skill Intl F4-4400C17-16GTZR 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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Panram International Corporation W4N2400PS-8G 8GB
内存RAM