Kingston ACR256X64D3S1333C9 2GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

需要考虑的原因
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

报告一个错误

更快的读取速度，GB/s

16.4 11.9

测试中的平均数值
更快的写入速度，GB/s

10.5 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

11.9 16.4
写入速度，GB/s

8.5 10.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3039

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Avant Technology J642GU42J2320NQ 16GB

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Crucial Technology CT25664BA1339.M8FK 2GB

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB

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Kingston 9905403-090.A01LF 4GB

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Apacer Technology GD2.1527WH.002 8GB

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Samsung M3 78T5663EH3-CF7 2GB

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Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Corsair CMH32GX4M2Z3200C16 16GB

Corsair CMH32GX4M2Z3200C16 16GB