Kingston ACR256X64D3S1333C9 2GB vs Micron Technology 16ATF4G64HZ-2G6B4 32GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Micron Technology 16ATF4G64HZ-2G6B4 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B4 32GB

报告一个错误

更快的读取速度，GB/s

15.9 11.9

测试中的平均数值
更快的写入速度，GB/s

15.1 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

11.9 15.9
写入速度，GB/s

8.5 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

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SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMW64GX4M8C3200C16 8GB

Corsair CMW64GX4M8C3200C16 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Hewlett-Packard 7EH99AA# 16GB

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Samsung M393B1K70CH0-YH9 8GB

Kingston 9965640-001.C00G 16GB

Kingston 9965640-001.C00G 16GB