Samsung DDR3 8GB 1600MHz 8GB vs G Skill Intl F4-3466C18-8GSXW 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

G Skill Intl F4-3466C18-8GSXW 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 71

左右 39% 更低的延时
更快的写入速度，GB/s

9.6 8.1

测试中的平均数值

G Skill Intl F4-3466C18-8GSXW 8GB

需要考虑的原因
G Skill Intl F4-3466C18-8GSXW 8GB

报告一个错误

更快的读取速度，GB/s

16.2 14.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 71
读取速度，GB/s

14.9 16.2
写入速度，GB/s

9.6 8.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 1979

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMD32GX4M2C3466C16W 16GB

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Samsung M393B5270CH0-CH9 4GB

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EVGA 16G-D4-2666-MR 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

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Crucial Technology CT8G4DFS6266.M4FB 8GB

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Kingston 9905471-006.A01LF 4GB

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB