Kingston ACR256X64D3S1333C9 2GB vs Micron Technology 18ASF1G72PDZ-2G1A1 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 51

左右 47% 更低的延时
更快的读取速度，GB/s

11.9 10.9

测试中的平均数值
更快的写入速度，GB/s

8.5 8.3

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1A1 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 51
读取速度，GB/s

11.9 10.9
写入速度，GB/s

8.5 8.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5474-013.A00LF 2GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

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Corsair CMR16GX4M2D3200C16 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Crucial Technology BLS8G4D240FSB.16FADG 8GB

Crucial Technology BLS8G4D240FSB.16FADG 8GB