Kingston ACR256X64D3S1333C9 2GB vs Micron Technology 36ASF4G72PZ-2G3B1 32GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 48% 更低的延时
更快的读取速度，GB/s

11.9 10

测试中的平均数值
更快的写入速度，GB/s

8.5 7.7

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G3B1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3B1 32GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 52
读取速度，GB/s

11.9 10.0
写入速度，GB/s

8.5 7.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 2260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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A-DATA Technology DQKD1A08 1GB

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Chun Well Technology Holding Limited MD4U1632161DCW 16GB

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AMD R744G2400U1S-UO 4GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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G Skill Intl F4-4400C19-32GVK 32GB

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Samsung M393B5270CH0-CH9 4GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB