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Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA851S6DJR6N-VK 4GB
比较
Kingston ACR256X64D3S1333C9 2GB vs SK Hynix HMA851S6DJR6N-VK 4GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
SK Hynix HMA851S6DJR6N-VK 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
40
左右 33% 更低的延时
需要考虑的原因
SK Hynix HMA851S6DJR6N-VK 4GB
报告一个错误
更快的读取速度,GB/s
15
11.9
测试中的平均数值
更快的写入速度,GB/s
11.2
8.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA851S6DJR6N-VK 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
40
读取速度,GB/s
11.9
15.0
写入速度,GB/s
8.5
11.2
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1620
2100
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
SK Hynix HMA851S6DJR6N-VK 4GB RAM的比较
Kingston 9905458-017.A01LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Elpida EBJ17RG4EFWA-DJ-F 16GB
Transcend Information TS512MSH64V1H 4GB
Kingston KHX1866C9D3/8GX 8GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4RL.M16FE 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.DAGNN.4030B 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905624-010.A00G 4GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-4000C16-8GVK 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston KHX3600C18D4/32GX 32GB
Golden Empire CL5-5-5DDR2 1GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-4000C19-8GTZKW 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
A-DATA Technology DQVE1908 512MB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Kingston ACR16D3LS1NGG/4G 4GB
Samsung M391A2K43BB1-CTD 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Transcend Information TS512MLH64V1H 4GB
报告一个错误
×
Bug description
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