Kingston ACR26D4S9S1KA-4 4GB vs Kingston HX421C14FB/4 4GB

总分

Kingston ACR26D4S9S1KA-4 4GB

Kingston ACR26D4S9S1KA-4 4GB

总分

Kingston HX421C14FB/4 4GB

Kingston HX421C14FB/4 4GB

差异规格评论

差异

Kingston ACR26D4S9S1KA-4 4GB

需要考虑的原因
Kingston ACR26D4S9S1KA-4 4GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Kingston HX421C14FB/4 4GB

需要考虑的原因
Kingston HX421C14FB/4 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 42

左右 -40% 更低的延时
更快的读取速度，GB/s

16.8 14.3

测试中的平均数值
更快的写入速度，GB/s

12.2 11.0

测试中的平均数值

规格

完整的技术规格清单

Kingston ACR26D4S9S1KA-4 4GB

Kingston HX421C14FB/4 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

42 30
读取速度，GB/s

14.3 16.8
写入速度，GB/s

11.0 12.2
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2074 2730

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2666C16/8G 8GB

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Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

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Corsair CMX4GX3M2A1600C9 2GB

G Skill Intl F4-3000C14-16GVR 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB