Kingston ACR512X64D3S13C9G 4GB vs Crucial Technology BL8G26C16U4B.8FE 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Crucial Technology BL8G26C16U4B.8FE 8GB

Crucial Technology BL8G26C16U4B.8FE 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Crucial Technology BL8G26C16U4B.8FE 8GB

需要考虑的原因
Crucial Technology BL8G26C16U4B.8FE 8GB

报告一个错误

更快的读取速度，GB/s

17.1 11.5

测试中的平均数值
更快的写入速度，GB/s

12.9 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology BL8G26C16U4B.8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

11.5 17.1
写入速度，GB/s

8.5 12.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1756 3222

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston ACR16D3LS1NGG/2G 2GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-2133C15-4GVK 4GB