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Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB

Kingston ACR512X64D3S13C9G 4GB vs Crucial Technology BLS4G4D26BFSE.8FB 4GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSE.8FB 4GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
Crucial Technology BLS4G4D26BFSE.8FB 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 27
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 22
  • 读取速度，GB/s
    11.5 left arrow 15.7
  • 写入速度，GB/s
    8.5 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 3174

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Crucial Technology BLS4G4D26BFSE.8FB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kllisre 8GB
Kllisre 8GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M378A1K43CB2-CTD 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KHX3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
内存RAM
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9965669-005.A01G 16GB
Kingston 9965669-005.A01G 16GB
内存RAM
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-014.A00G 8GB
Kingston 9905702-014.A00G 8GB
内存RAM