Kingston ACR512X64D3S13C9G 4GB vs Crucial Technology CT16G4DFD8266.M16FD 16GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Crucial Technology CT16G4DFD8266.M16FD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FD 16GB

报告一个错误

更快的读取速度，GB/s

17.6 11.5

测试中的平均数值
更快的写入速度，GB/s

13.7 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.5 17.6
写入速度，GB/s

8.5 13.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1756 3432

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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A-DATA Technology VDQVE1B16 2GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology CT102464BA160B.M16 8GB

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G Skill Intl F4-3733C17-8GTZA 8GB

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V-Color Technology Inc. TD8G16C16-UHK 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3200C16-16GTRS 16GB

G Skill Intl F4-3200C16-16GTRS 16GB

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Samsung M471B5273EB0-CK0 4GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

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Corsair CM4X16GE2666C18S2 16GB

Corsair CM4X16GE2666C18S2 16GB