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Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Kingston ACR512X64D3S13C9G 4GB vs Crucial Technology CT4G4DFS8213.C8FAD11 4GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
Crucial Technology CT4G4DFS8213.C8FAD11 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 26
  • 读取速度，GB/s
    11.5 left arrow 14.4
  • 写入速度，GB/s
    8.5 left arrow 10.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 2497

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BL8G24C16U4B.8FD 8GB
Crucial Technology BL8G24C16U4B.8FD 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
内存RAM
Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Gloway International (HK) STK4U2400D17082C 8GB
Gloway International (HK) STK4U2400D17082C 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C16-8GVK 8GB
G Skill Intl F4-4000C16-8GVK 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
Team Group Inc. TEAMGROUP-UD4-2133 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
内存RAM
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM