Kingston ACR512X64D3S13C9G 4GB vs Crucial Technology CT8G4DFS8213.C8FBD1 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FBD1 8GB

报告一个错误

更快的读取速度，GB/s

14.5 11.5

测试中的平均数值
更快的写入速度，GB/s

9.5 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

11.5 14.5
写入速度，GB/s

8.5 9.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1756 2543

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Micron Technology 18ASF2G72AZ-2G6D1 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

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G Skill Intl F4-3600C18-8GTZN 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Ramaxel Technology RMSA3230KB78HAF2133 8GB