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Samsung M378B5673EH1-CF8 2GB
Corsair CM4X8GD3600C18K2D 8GB

Samsung M378B5673EH1-CF8 2GB vs Corsair CM4X8GD3600C18K2D 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Corsair CM4X8GD3600C18K2D 8GB

Corsair CM4X8GD3600C18K2D 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Corsair CM4X8GD3600C18K2D 8GB 需要考虑的原因
Corsair CM4X8GD3600C18K2D 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Corsair CM4X8GD3600C18K2D 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 27
  • 读取速度，GB/s
    12.7 left arrow 17.6
  • 写入速度，GB/s
    7.5 left arrow 16.0
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3478

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Corsair CM4X8GD3600C18K2D 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD16GX4M4B3400C16 4GB
Corsair CMD16GX4M4B3400C16 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMWX8GD3600C18W4 8GB
Corsair CMWX8GD3600C18W4 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Corsair CMD32GX4M4B3466C16 8GB
Corsair CMD32GX4M4B3466C16 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CM4X8GD3600C18K2D 8GB
Corsair CM4X8GD3600C18K2D 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston XN205T-MIE2 16GB
Kingston XN205T-MIE2 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Kingston 9905598-028.A00G 8GB
Kingston 9905598-028.A00G 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
内存RAM
Ramaxel Technology RMT3170EF68F9W1600 4GB
Ramaxel Technology RMT3170EF68F9W1600 4GB
Patriot Memory (PDP Systems) PSD34G160081S 4GB
Patriot Memory (PDP Systems) PSD34G160081S 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kllisre D4 8G 8GB
Kllisre D4 8G 8GB
内存RAM