Kingston ACR512X64D3S13C9G 4GB vs G Skill Intl F4-3200C14-16GTZR 16GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

G Skill Intl F4-3200C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

19.1 11.5

测试中的平均数值
更快的写入速度，GB/s

15.9 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-3200C14-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

11.5 19.1
写入速度，GB/s

8.5 15.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1756 3876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Maxsun MSD44G24Q3 4GB

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Samsung M393B2G70BH0-CK0 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Kingston KHX1600C9D3/8G 8GB

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G Skill Intl F4-3000C15-4GVSB 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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Micron Technology 36ADS2G72PZ-2G1A1 16GB

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB