Kingston ACR512X64D3S13C9G 4GB vs Heoriady HX2666DT8G-TD 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 31% 更低的延时

Heoriady HX2666DT8G-TD 8GB

需要考虑的原因
Heoriady HX2666DT8G-TD 8GB

报告一个错误

更快的读取速度，GB/s

14.6 11.5

测试中的平均数值
更快的写入速度，GB/s

10.1 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Heoriady HX2666DT8G-TD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 39
读取速度，GB/s

11.5 14.6
写入速度，GB/s

8.5 10.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1756 2513

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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SK Hynix HMA82GS6CJR8N-XN 16GB

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Kingston 99U5584-009.A00LF 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3600C16-16GTRG 16GB

G Skill Intl F4-3600C16-16GTRG 16GB