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Samsung M393B1G70BH0-CK0 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB

Samsung M393B1G70BH0-CK0 8GB vs Micron Technology 18ASF2G72AZ-2G1A1 16GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 7.7
    测试中的平均数值
Micron Technology 18ASF2G72AZ-2G1A1 16GB 需要考虑的原因
Micron Technology 18ASF2G72AZ-2G1A1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 51
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    11.7 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 31
  • 读取速度，GB/s
    9.8 left arrow 11.7
  • 写入速度，GB/s
    8.1 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 1997

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB RAM的比较

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX3333C16D4/16GX 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair MK16GX44B3000C15 4GB
Corsair MK16GX44B3000C15 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston HP26D4S9S8MH-8 8GB
Kingston HP26D4S9S8MH-8 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C15-16GTZSK 16GB
G Skill Intl F4-3200C15-16GTZSK 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK32GX4M4B3200C14 8GB
Corsair CMK32GX4M4B3200C14 8GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-2133C15-16GFX 16GB
G Skill Intl F4-2133C15-16GFX 16GB
内存RAM