Kingston ACR512X64D3S13C9G 4GB vs Micron Technology 16ATF2G64HZ-3G2E1 16GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Micron Technology 16ATF2G64HZ-3G2E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2E1 16GB

报告一个错误

更快的读取速度，GB/s

16.7 11.5

测试中的平均数值
更快的写入速度，GB/s

15.1 8.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

11.5 16.7
写入速度，GB/s

8.5 15.1
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1756 3191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMT16GX4M2C3000C15 8GB

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Kingston 9905403-090.A01LF 4GB

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SK Hynix HMA451U6MFR8N-TF 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Samsung M471B5273CH0-CH9 4GB

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A Force Manufacturing Ltd. UD-01G64V2133P 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Corsair CMK16GX4M4B3200C16 4GB

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