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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Panram International Corporation PUD43000C168G2NJR 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Panram International Corporation PUD43000C168G2NJR 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
25
左右 4% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Panram International Corporation PUD43000C168G2NJR 8GB
报告一个错误
更快的读取速度,GB/s
15.9
15.5
测试中的平均数值
更快的写入速度,GB/s
12.1
11.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
25
读取速度,GB/s
15.5
15.9
写入速度,GB/s
11.0
12.1
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2445
2781
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Panram International Corporation PUD43000C168G2NJR 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325S6BFR8C-H9 2GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
SpecTek Incorporated ?????????????????? 2GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M378A1K43EB2-CWE 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Samsung M391B5673EH1-CH9 2GB
Corsair CMT32GX4M2D3600C18 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston X2YH1K-MIE-NX 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Corsair CM4X4GF2133C15S2 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C19-16GRS 16GB
Samsung M378T5663QZ3-CF7 2GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
报告一个错误
×
Bug description
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