Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Micron Technology 8ATF1G64HZ-2G6E3 8GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

Micron Technology 8ATF1G64HZ-2G6E3 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6E3 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 41

左右 -17% 更低的延时
更快的读取速度，GB/s

15 14

测试中的平均数值
更快的写入速度，GB/s

12.3 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 35
读取速度，GB/s

14.0 15.0
写入速度，GB/s

9.2 12.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2356 2841

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMWX8GD3000C16W4D 8GB

Corsair CMWX8GD3000C16W4D 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Ramaxel Technology RMUA5090KB78HAF2133 8GB

Ramaxel Technology RMUA5090KB78HAF2133 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston 99U5712-002.A00G 16GB

Kingston 99U5712-002.A00G 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F4-2666C19-16GRS 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3200C16-8GVKB 8GB

G Skill Intl F4-3200C16-8GVKB 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB