Kingston KVR533D2N4 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 75

左右 -159% 更低的延时
更快的读取速度，GB/s

12.2 1

测试中的平均数值
更快的写入速度，GB/s

9.6 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 29
读取速度，GB/s

1,943.5 12.2
写入速度，GB/s

1,672.1 9.6
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4B16G2L2666A18K2 16GB

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Samsung M471B1G73QH0-YK0 8GB

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PUSKILL DDR3 1600 8G 8GB

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Chun Well Technology Holding Limited MD4U1632160DCW 16G

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