Kingston ACR512X64D3S13C9G 4GB vs Panram International Corporation PUD43000C154G4NJW 4GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Panram International Corporation PUD43000C154G4NJW 4GB

Panram International Corporation PUD43000C154G4NJW 4GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

Panram International Corporation PUD43000C154G4NJW 4GB

需要考虑的原因
Panram International Corporation PUD43000C154G4NJW 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 27

左右 -42% 更低的延时
更快的读取速度，GB/s

19.4 11.5

测试中的平均数值
更快的写入速度，GB/s

15.1 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Panram International Corporation PUD43000C154G4NJW 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 19
读取速度，GB/s

11.5 19.4
写入速度，GB/s

8.5 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1756 3314

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-3000 8GB

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Kingston ACR256X64D3S1333C9 2GB

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SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Mushkin MRA4S320GJJM16G 16GB

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Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Panram International Corporation W4U2400PS-4G 4GB

Panram International Corporation W4U2400PS-4G 4GB

Samsung 1600 CL10 Series 8GB

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Kingston 9905469-143.A00LF 4GB

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Smart Modular SF4641G8CK8IEGKSBG 8GB

Smart Modular SF4641G8CK8IEGKSBG 8GB