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Kingston HP16D3LS1KBGH/4G 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB

Kingston HP16D3LS1KBGH/4G 4GB vs Chun Well Technology Holding Limited D4U1636144B 16GB

总分
star star star star star
Kingston HP16D3LS1KBGH/4G 4GB

Kingston HP16D3LS1KBGH/4G 4GB

总分
star star star star star
Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

差异 规格 评论

差异

Kingston HP16D3LS1KBGH/4G 4GB 需要考虑的原因
Kingston HP16D3LS1KBGH/4G 4GB
报告一个错误
Chun Well Technology Holding Limited D4U1636144B 16GB 需要考虑的原因
Chun Well Technology Holding Limited D4U1636144B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    23.7 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.3 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston HP16D3LS1KBGH/4G 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 26
  • 读取速度，GB/s
    10.4 left arrow 23.7
  • 写入速度，GB/s
    7.1 left arrow 18.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1560 left arrow 4124

Kingston HP16D3LS1KBGH/4G 4GB RAM的比较

Samsung M471B5173CB0-YK0 4GB
HT Micron HTH5AN8G8NCJR-VKD 8GB

Chun Well Technology Holding Limited D4U1636144B 16GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Apacer Technology 76.D105G.D090B 16GB
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Corsair CMK8GX4M2C3000C16 4GB
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内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
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内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
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内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
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Eudar Technology Inc. 8GXMP2666CL16 8GB
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内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3200C14-32GTZR 32GB
G Skill Intl F4-3200C14-32GTZR 32GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Kingston 8ATF1G64AZ-2G3A141 8GB
内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Samsung M471A1K43CBCBCRC 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA851U6AFR6N-UH 4GB
SK Hynix HMA851U6AFR6N-UH 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Apacer Technology 78.C1GMW.AUC0B 8GB
Apacer Technology 78.C1GMW.AUC0B 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
内存RAM