Kingston HX316C10F/8 8GB vs Crucial Technology CT8G4DFS8266.C8FD1 8GB

总分

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

总分

Crucial Technology CT8G4DFS8266.C8FD1 8GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

差异规格评论

差异

Kingston HX316C10F/8 8GB

需要考虑的原因
Kingston HX316C10F/8 8GB

报告一个错误

Crucial Technology CT8G4DFS8266.C8FD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 36

左右 -20% 更低的延时
更快的读取速度，GB/s

16.6 14.7

测试中的平均数值
更快的写入速度，GB/s

11.6 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston HX316C10F/8 8GB

Crucial Technology CT8G4DFS8266.C8FD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 30
读取速度，GB/s

14.7 16.6
写入速度，GB/s

9.2 11.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2585 2951

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB

Kingston 99U5471-012.A00 4GB

Kingston 99U5471-012.A00 4GB

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMK64GX4M4A2400C16 16GB

Corsair CMK64GX4M4A2400C16 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMSX32GX4M2A2666C18 16GB

Corsair CMSX32GX4M2A2666C18 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

G Skill Intl F3-1600C9-4GAO 4GB

G Skill Intl F3-1600C9-4GAO 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB