Kingston HX316C10F/8 8GB vs Samsung M471A1G44BB0-CWE 8GB

总分

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

总分

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

差异规格评论

差异

Kingston HX316C10F/8 8GB

需要考虑的原因
Kingston HX316C10F/8 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 60

左右 40% 更低的延时

Samsung M471A1G44BB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44BB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

15.3 14.7

测试中的平均数值
更快的写入速度，GB/s

11.0 9.2

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston HX316C10F/8 8GB

Samsung M471A1G44BB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 60
读取速度，GB/s

14.7 15.3
写入速度，GB/s

9.2 11.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2585 2359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

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Mushkin 99[2/7/4]189F 4GB

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PNY Electronics PNY 2GB

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Samsung M471B5273DH0-CK0 4GB

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EVGA 8GX-D4-3200-MR 8GB

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AMD R538G1601U2S 8GB

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Corsair CMK32GX4M2C3200C18 16GB

Corsair CMK32GX4M2C3200C18 16GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

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Kingston KF2666C16D4/8G 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston KV0M5R-MIE 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston XN205T-MIE2 16GB

Kingston XN205T-MIE2 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB