Kingston HX318C10FK/4 4GB vs Panram International Corporation W4N2400PS-8G 8GB

总分

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分

Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

差异规格评论

差异

Kingston HX318C10FK/4 4GB

需要考虑的原因
Kingston HX318C10FK/4 4GB

报告一个错误

Panram International Corporation W4N2400PS-8G 8GB

需要考虑的原因
Panram International Corporation W4N2400PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 69

左右 -200% 更低的延时
更快的读取速度，GB/s

16.6 6.1

测试中的平均数值
更快的写入速度，GB/s

12.9 4.1

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Kingston HX318C10FK/4 4GB

Panram International Corporation W4N2400PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 23
读取速度，GB/s

6.1 16.6
写入速度，GB/s

4.1 12.9
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1116 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM3X8GA2400C11Y2R 8GB

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SK Hynix HMA42GR7AFR4N-TF 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Crucial Technology BLS16G4D240FSC.16FBD 16GB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

Samsung M378A1K43EB2-CWE 8GB

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Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

A-DATA Technology DDR3 1866 2OZ 4GB

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G Skill Intl F4-3200C22-8GRS 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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