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Samsung M471A5244CB0-CWE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
比较
Samsung M471A5244CB0-CWE 4GB vs Crucial Technology BL4G24C16U4B.8FE 4GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
Crucial Technology BL4G24C16U4B.8FE 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
更快的读取速度,GB/s
15.5
14.8
测试中的平均数值
更快的写入速度,GB/s
12.0
11.1
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
Crucial Technology BL4G24C16U4B.8FE 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
38
左右 -9% 更低的延时
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
35
读取速度,GB/s
15.5
14.8
写入速度,GB/s
12.0
11.1
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2283
2566
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB RAM的比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-023.A00LF 4GB
Apacer Technology 78.D2GFH.4030B 16GB
Kingston 9965662-016.A00G 16GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Crucial Technology CT51264BA1339.C16F 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Samsung M3 78T5663EH3-CF7 2GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
AMD R5S38G1601U2S 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston KHX1866C10D3/8GX 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
AMD R5316G1609U2K 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR512X64D3S13C9G 4GB
Heoriady M471A1K43CB1-CTD 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston KF3200C16D4/16GX 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M474A2K43BB1-CRC 16GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
Kingston 99U5584-001.A00LF 4GB
A-DATA Technology DDR4 3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2933C16-16GTZRX 16GB
报告一个错误
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Bug description
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