Kingston K1N7HK-ELC 2GB vs Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

总分

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

差异规格评论

差异

Kingston K1N7HK-ELC 2GB

需要考虑的原因
Kingston K1N7HK-ELC 2GB

报告一个错误

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 26

左右 -37% 更低的延时
更快的读取速度，GB/s

20 12.6

测试中的平均数值
更快的写入速度，GB/s

16.2 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston K1N7HK-ELC 2GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 19
读取速度，GB/s

12.6 20.0
写入速度，GB/s

7.7 16.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1820 3542

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Samsung M471B5673FH0-CF8 2GB

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Golden Empire CL14-16-16 D4-3000 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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SK Hynix HMA84GR7MFR4N-TF 32GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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Samsung M391B5673EH1-CH9 2GB

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Essencore Limited IM48GU88N24-FFFHMB 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMU32GX4M2C3333C16 16GB