Kingston K1N7HK-ELC 2GB vs G Skill Intl F4-3200C14-8GTRS 8GB

总分

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分

G Skill Intl F4-3200C14-8GTRS 8GB

G Skill Intl F4-3200C14-8GTRS 8GB

差异规格评论

差异

Kingston K1N7HK-ELC 2GB

需要考虑的原因
Kingston K1N7HK-ELC 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时

G Skill Intl F4-3200C14-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTRS 8GB

报告一个错误

更快的读取速度，GB/s

18.7 12.6

测试中的平均数值
更快的写入速度，GB/s

15.5 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston K1N7HK-ELC 2GB

G Skill Intl F4-3200C14-8GTRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

12.6 18.7
写入速度，GB/s

7.7 15.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1820 3394

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AD73I1C1674EV 4GB

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Essencore Limited KD4AGSA8A-32N2200 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-2800C15-16GRKD 16GB

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Samsung M378T5663QZ3-CF7 2GB

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Corsair CMSX64GX4M4A2400C16 16GB

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Crucial Technology BLS4G4D240FSA.8FADG 4GB

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Kingston M378A1K43CB2-CRC 8GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CMSX16GX4M2A3200C22 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CMD32GX4M4B2133C10 8GB

Corsair CMD32GX4M4B2133C10 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT8G4SFS824A.C8FJ 8GB

Crucial Technology CT8G4SFS824A.C8FJ 8GB