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Kingston K531R8-MIN 4GB
Corsair CMD16GX4M2B2800C14 8GB

Kingston K531R8-MIN 4GB vs Corsair CMD16GX4M2B2800C14 8GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
Corsair CMD16GX4M2B2800C14 8GB

Corsair CMD16GX4M2B2800C14 8GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
Corsair CMD16GX4M2B2800C14 8GB 需要考虑的原因
Corsair CMD16GX4M2B2800C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
Corsair CMD16GX4M2B2800C14 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 23
  • 读取速度，GB/s
    13.4 left arrow 18.0
  • 写入速度，GB/s
    9.0 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 3070

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Corsair CMD16GX4M2B2800C14 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Corsair CMD16GX4M2B2800C14 8GB
Corsair CMD16GX4M2B2800C14 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 9965589-007.D01G 8GB
Kingston 9965589-007.D01G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Essencore Limited KD4AGU880-32A160X 16GB
Essencore Limited KD4AGU880-32A160X 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Kingston 99U5713-003.A00G 4GB
Kingston 99U5713-003.A00G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Asgard VMA41UG-MEC1U2AW1 8GB
Asgard VMA41UG-MEC1U2AW1 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMW32GX4M4K4000C19 8GB
Corsair CMW32GX4M4K4000C19 8GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Kingston KM0VW4-MID 8GB
Kingston KM0VW4-MID 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-2133C15-8GSQ 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
内存RAM