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Kingston K531R8-MIN 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
比较
Kingston K531R8-MIN 4GB vs Micron Technology 18ASF2G72PDZ-2G3D1 16GB
总分
Kingston K531R8-MIN 4GB
总分
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
39
左右 28% 更低的延时
更快的读取速度,GB/s
13.4
8.7
测试中的平均数值
更快的写入速度,GB/s
9.0
6.2
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston K531R8-MIN 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
39
读取速度,GB/s
13.4
8.7
写入速度,GB/s
9.0
6.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2445
1842
Kingston K531R8-MIN 4GB RAM的比较
Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Mushkin 991586 2GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMD8GX4M2B3000C15 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston ACR24D4U7S8MB-8 8GB
A-DATA Technology DDR3 1600 4GB
Corsair CMK32GX4M2Z4000C18 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2G40EB1-CRC 16GB
Kingston K531R8-MIN 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3600C18-8GTRS 8GB
Kingston 99U5474-028.A00LF 4GB
AMD R748G2606U2S 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2800C15-4GTZB 4GB
Kingston KVR16N11/8-SP 8GB
SK Hynix GKE160SO102408-3000 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C14-32GTRS 32GB
Samsung M378A1K43DB2-CTD 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
报告一个错误
×
Bug description
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