Kingston K531R8-MIN 4GB vs Samsung M378A5244CB0-CTD 4GB

总分

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

差异规格评论

差异

Kingston K531R8-MIN 4GB

需要考虑的原因
Kingston K531R8-MIN 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

更快的读取速度，GB/s

15.8 13.4

测试中的平均数值
更快的写入速度，GB/s

11.8 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston K531R8-MIN 4GB

Samsung M378A5244CB0-CTD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

13.4 15.8
写入速度，GB/s

9.0 11.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2445 2497

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4266C17-16GTZRB 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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