RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KF552C40-16 16GB
SK Hynix HMA81GS6AFR8N-UH 8GB

Kingston KF552C40-16 16GB vs SK Hynix HMA81GS6AFR8N-UH 8GB

总分
star star star star star
Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分
star star star star star
SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB

差异 规格 评论

差异

Kingston KF552C40-16 16GB 需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 38
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 10.1
    测试中的平均数值
SK Hynix HMA81GS6AFR8N-UH 8GB 需要考虑的原因
SK Hynix HMA81GS6AFR8N-UH 8GB
报告一个错误

规格

完整的技术规格清单
Kingston KF552C40-16 16GB
SK Hynix HMA81GS6AFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 38
  • 读取速度，GB/s
    15.5 left arrow 13.8
  • 写入速度，GB/s
    13.2 left arrow 10.1
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3343 left arrow 2363

Kingston KF552C40-16 16GB RAM的比较

Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB RAM的比较

SpecTek Incorporated ?????????????????? 2GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
AMD R748G2606U2S 8GB
AMD R748G2606U2S 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK32GX4M4B4000C19 8GB
Corsair CMK32GX4M4B4000C19 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Panram International Corporation PUD43000C164G2NJK 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston 9905678-105.A00G 8GB
Kingston 9905678-105.A00G 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston KHX2400C12D4/16GX 16GB
Kingston KHX2400C12D4/16GX 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
内存RAM