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Kingston KF552C40-16 16GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Kingston KF552C40-16 16GB vs Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

总分
star star star star star
Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

总分
star star star star star
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

差异 规格 评论

差异

Kingston KF552C40-16 16GB 需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 11.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 30
    左右 -25% 更低的延时

规格

完整的技术规格清单
Kingston KF552C40-16 16GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 24
  • 读取速度，GB/s
    15.5 left arrow 15.0
  • 写入速度，GB/s
    13.2 left arrow 11.3
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3343 left arrow 2370

Kingston KF552C40-16 16GB RAM的比较

Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston ACR24D4U7D8MB-16 16GB
Kingston ACR24D4U7D8MB-16 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3333C16-8GVK 8GB
G Skill Intl F4-3333C16-8GVK 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Avant Technology J641GU48J5213NG 8GB
Avant Technology J641GU48J5213NG 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2666C18-8GFT 8GB
G Skill Intl F4-2666C18-8GFT 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston 9965596-029.B00G 4GB
Kingston 9965596-029.B00G 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM