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Kingston KHX1600C9D3/4G 4GB
Corsair CMZ16GX3M4A1866C9 4GB

Kingston KHX1600C9D3/4G 4GB vs Corsair CMZ16GX3M4A1866C9 4GB

总分
star star star star star
Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分
star star star star star
Corsair CMZ16GX3M4A1866C9 4GB

Corsair CMZ16GX3M4A1866C9 4GB

差异 规格 评论

差异

Kingston KHX1600C9D3/4G 4GB 需要考虑的原因
Kingston KHX1600C9D3/4G 4GB
报告一个错误
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Corsair CMZ16GX3M4A1866C9 4GB 需要考虑的原因
Corsair CMZ16GX3M4A1866C9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 36
    左右 -13% 更低的延时
  • 更快的写入速度，GB/s
    10.5 left arrow 9.7
    测试中的平均数值

规格

完整的技术规格清单
Kingston KHX1600C9D3/4G 4GB
Corsair CMZ16GX3M4A1866C9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    36 left arrow 32
  • 读取速度，GB/s
    14.5 left arrow 14.5
  • 写入速度，GB/s
    9.7 left arrow 10.5
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 2627

Kingston KHX1600C9D3/4G 4GB RAM的比较

Kingston 99U5403-050.A00LF 4GB
Kingston KHX1600C10D3/8G 8GB

Corsair CMZ16GX3M4A1866C9 4GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FE 16GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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InnoDisk Corporation 16GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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内存RAM
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Kingston KVR16N11/8-SP 8GB
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内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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Kingston HP24D4U7S1MBP-4 4GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
内存RAM
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G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM