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Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
比较
Kingston KHX1600C9D3/4G 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
总分
Kingston KHX1600C9D3/4G 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston KHX1600C9D3/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
40
左右 10% 更低的延时
更快的读取速度,GB/s
14.5
9.1
测试中的平均数值
更快的写入速度,GB/s
9.7
6.9
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
40
读取速度,GB/s
14.5
9.1
写入速度,GB/s
9.7
6.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2465
2031
Kingston KHX1600C9D3/4G 4GB RAM的比较
Kingston 99U5403-050.A00LF 4GB
Kingston KHX1600C10D3/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
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AMD R948G3206U2S 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
A-DATA Technology AD4S320038G22-B 8GB
Samsung M395T2863QZ4-CF76 1GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905624-009.A00G 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4800C18-8GTRG 8GB
Kingston 9905403-061.A00LF 2GB
Corsair CM4B16G1J2400A16K2-O 16GB
报告一个错误
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Bug description
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