Kingston KHX1600C9D3/4G 4GB vs Samsung SH5724G4UNC26P2-SC 32GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

Samsung SH5724G4UNC26P2-SC 32GB

Samsung SH5724G4UNC26P2-SC 32GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 33% 更低的延时
更快的读取速度，GB/s

14.5 10.9

测试中的平均数值
更快的写入速度，GB/s

9.7 9.1

测试中的平均数值

Samsung SH5724G4UNC26P2-SC 32GB

需要考虑的原因
Samsung SH5724G4UNC26P2-SC 32GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

Samsung SH5724G4UNC26P2-SC 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 54
读取速度，GB/s

14.5 10.9
写入速度，GB/s

9.7 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 2176

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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Apacer Technology 78.CAGP7.AFW0C 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Kingston ACR26D4S9D8MD-16 16GB

Kingston ACR26D4S9D8MD-16 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

Kingston 9905713-030.A00G 8GB

Kingston 9905713-030.A00G 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB