Kingston KHX1600C9D3/8G 8GB vs INTENSO 4GB

总分

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分

INTENSO 4GB

INTENSO 4GB

差异规格评论

差异

Kingston KHX1600C9D3/8G 8GB

需要考虑的原因
Kingston KHX1600C9D3/8G 8GB

报告一个错误

更快的读取速度，GB/s

14.7 12.1

测试中的平均数值

INTENSO 4GB

需要考虑的原因
INTENSO 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 38

左右 -6% 更低的延时
更快的写入速度，GB/s

9.3 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/8G 8GB

INTENSO 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 36
读取速度，GB/s

14.7 12.1
写入速度，GB/s

9.1 9.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2496 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Asgard VMA41UH-MEC1U2AW1 16GB

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Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

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Crucial Technology CB8GS2400.C8D 8GB

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Micron Technology AFSD416ES1P 16GB

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Vasekey M378A1K43BB2-CPB 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-3600C18-32GVK 32GB

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Kingston 99U5403-036.A00G 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Kingston KHX3000C15D4/8GX 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200