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Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Kingston KHX1600C9S3L/4G 4GB vs Crucial Technology BLS8G4D26BFSCK.8FD 8GB

总分
star star star star star
Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

差异 规格 评论

差异

Kingston KHX1600C9S3L/4G 4GB 需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB
报告一个错误
Crucial Technology BLS8G4D26BFSCK.8FD 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 40
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 13.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 29
  • 读取速度，GB/s
    13.1 left arrow 17.0
  • 写入速度，GB/s
    8.5 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2148 left arrow 3140

Kingston KHX1600C9S3L/4G 4GB RAM的比较

Kingston TSB16D3LS1KFG/4G 4GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M393A4K40CB1-CRC 32GB
Samsung M393A4K40CB1-CRC 32GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M393A1G40DB1-CRC 8GB
Samsung M393A1G40DB1-CRC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD32GX4M4A2400C14 8GB
Corsair CMD32GX4M4A2400C14 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3466C16-8GTZSK 8GB
G Skill Intl F4-3466C16-8GTZSK 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905712-001.B00G 16GB
Kingston 9905712-001.B00G 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A1G43EB1-CRC 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905624-010.A00G 4GB
Kingston 9905624-010.A00G 4GB
内存RAM