Kingston KHX1600C9S3L/4G 4GB vs Kingston ACR26D4U9S8ME-8X 8GB

总分

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分

Kingston ACR26D4U9S8ME-8X 8GB

Kingston ACR26D4U9S8ME-8X 8GB

差异规格评论

差异

Kingston KHX1600C9S3L/4G 4GB

需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB

报告一个错误

Kingston ACR26D4U9S8ME-8X 8GB

需要考虑的原因
Kingston ACR26D4U9S8ME-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 40

左右 -33% 更低的延时
更快的读取速度，GB/s

15.5 13.1

测试中的平均数值
更快的写入速度，GB/s

12.8 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/4G 4GB

Kingston ACR26D4U9S8ME-8X 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 30
读取速度，GB/s

13.1 15.5
写入速度，GB/s

8.5 12.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2148 3090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA41GR7MFR4N-TFTD 8GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology BLS16G4D240FSC.16FD 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Samsung M471B5773DH0-CH9 2GB

Corsair CMK16GX4M2G4000C16 8GB

Corsair CMK16GX4M2G4000C16 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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SK Hynix GKE160UD102408-2400 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology CT8G4DFS824A.M8FE 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Kingston KHX3733C19D4/8GX 8GB

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Samsung M393B5270CH0-CH9 4GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB