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Kingston KHX1600C9S3L/4G 4GB
Panram International Corporation PUD42400C168GVS 8GB

Kingston KHX1600C9S3L/4G 4GB vs Panram International Corporation PUD42400C168GVS 8GB

总分
star star star star star
Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分
star star star star star
Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

差异 规格 评论

差异

Kingston KHX1600C9S3L/4G 4GB 需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB
报告一个错误
Panram International Corporation PUD42400C168GVS 8GB 需要考虑的原因
Panram International Corporation PUD42400C168GVS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 40
    左右 -74% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 13.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9S3L/4G 4GB
Panram International Corporation PUD42400C168GVS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 23
  • 读取速度，GB/s
    13.1 left arrow 17.4
  • 写入速度，GB/s
    8.5 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2148 left arrow 3063

Kingston KHX1600C9S3L/4G 4GB RAM的比较

Kingston TSB16D3LS1KFG/4G 4GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB

Panram International Corporation PUD42400C168GVS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology AD73I1C1674EV 4GB
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内存RAM
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Kingston 9905403-447.A00LF 4GB
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内存RAM
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Kingston 9905734-063.A00G 32GB
内存RAM