Kingston KHX1600C9S3L/8G 8GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

总分

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异规格评论

差异

Kingston KHX1600C9S3L/8G 8GB

需要考虑的原因
Kingston KHX1600C9S3L/8G 8GB

报告一个错误

更快的写入速度，GB/s

9.2 9.1

测试中的平均数值

Crucial Technology CB8GS2666.C8ET 8GB

需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 41

左右 -5% 更低的延时
更快的读取速度，GB/s

14 13.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/8G 8GB

Crucial Technology CB8GS2666.C8ET 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 39
读取速度，GB/s

13.4 14.0
写入速度，GB/s

9.2 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2348 2221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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A-DATA Technology AM2P26KC8T1-BXRS 8GB

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Samsung M471B5673FH0-CF8 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-3466C16-8GTZSK 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Micron Technology 16GB 2133MHz DIMM 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Crucial Technology CT16G4DFRA266.C8FE 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMD32GX4M4E4000C19 8GB

Corsair CMD32GX4M4E4000C19 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Samsung M393B1K70QB0-CK0 8GB

Corsair CMR32GX4M4C3000C15 8GB

Corsair CMR32GX4M4C3000C15 8GB