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Kingston KHX1866C10D3/8GX 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB

Kingston KHX1866C10D3/8GX 8GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB

总分
star star star star star
Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

总分
star star star star star
Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

差异 规格 评论

差异

Kingston KHX1866C10D3/8GX 8GB 需要考虑的原因
Kingston KHX1866C10D3/8GX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 6.6
    测试中的平均数值
Memphis Electronic D4SO1G724GI-A58SD 8GB 需要考虑的原因
Memphis Electronic D4SO1G724GI-A58SD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 39
    左右 -30% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KHX1866C10D3/8GX 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 30
  • 读取速度，GB/s
    14.4 left arrow 11.7
  • 写入速度，GB/s
    9.8 left arrow 6.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2600 left arrow 1832

Kingston KHX1866C10D3/8GX 8GB RAM的比较

Samsung M378B1G73AH0-CH9 8GB
Crucial Technology CT16G4SFD824A.C16FN 16GB

Memphis Electronic D4SO1G724GI-A58SD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston KHX1866C10D3/8GX 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
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