Kingston KHX1866C10D3/8GX 8GB vs Samsung M386A8K40BMB-CPB 64GB

总分

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

总分

Samsung M386A8K40BMB-CPB 64GB

Samsung M386A8K40BMB-CPB 64GB

差异规格评论

差异

Kingston KHX1866C10D3/8GX 8GB

需要考虑的原因
Kingston KHX1866C10D3/8GX 8GB

报告一个错误

更快的读取速度，GB/s

14.4 9.1

测试中的平均数值
更快的写入速度，GB/s

9.8 8.3

测试中的平均数值

Samsung M386A8K40BMB-CPB 64GB

需要考虑的原因
Samsung M386A8K40BMB-CPB 64GB

报告一个错误

低于PassMark测试中的延时，ns

35 39

左右 -11% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C10D3/8GX 8GB

Samsung M386A8K40BMB-CPB 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 35
读取速度，GB/s

14.4 9.1
写入速度，GB/s

9.8 8.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2600 2229

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-D4-3866 4GB

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Kingston KHX1866C10D3/8GX 8GB

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Avant Technology F641GU67F9333G 8GB

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Micron Technology 18ADF1G72PZ-2G1A1 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Corsair CMW64GX4M8Z2933C16 8GB

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Apacer Technology 78.C1GS7.AUC0B 8GB

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G Skill Intl F4-4000C17-16GTZRB 16GB

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Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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SK Hynix V-GeN D4H4GL26A8TL 4GB

Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology BLS16G4D30BESB.16FD 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

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Crucial Technology CT8G4SFS824A.C8FJ 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB